Semiconductor device with SOI structure and method of manufacturing the same

ABSTRACT

A semiconductor device includes a conductive semiconductor substrate laminated or bonded on a conductive support substrate through a first insulating film, a separation trench which separates a device formation region where at least a desired element is formed, from a region of the semiconductor substrate, a separation trench, and a substrate contact region where the semiconductor substrate is not present. The semiconductor device further includes a second insulating film which fills the separation trench and covers a surface of the substrate contact region, an external connection electrode formed above the semiconductor substrate, and a support substrate connecting section which passes through the first insulating film and the second insulating film in the substrate contact region to connect the external connection electrode and the support substrate.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device with a SOIstructure and a method of manufacturing the same.

2. Description of the Related Art

The substrate structure of a chip of a semiconductor device of thepresent invention is not limited in particular. However, the presentinvention is applied to a so-called SOI (Silicon On Insulator) which isthe most popular structure. The SOI structure is formed by use of thetechniques such as a SIMOX (Separation by Implanted Oxygen) method usingion implantation of oxygen ions, and a method of bonding siliconsubstrates. For example, as a chip 110 shown in FIG. 1A, the structureis formed in which an insulating film 303 and a single crystalsemiconductor layer 302 are formed in this order on a support substrate301 usually made of a silicon substrate.

The semiconductor device using the substrate having the SOI structure(hereinafter, referred to as an SOI semiconductor device) is preferablefor the application requiring a high breakdown voltage. In the SOIsemiconductor device, a chip is typically mounted on an island of apackage by conductive adhesive, and an external connection electrode onthe chip are individually connected to predetermined external terminalsby use of a wire bonding method, similarly to a typical semiconductordevice. The island is connected to any of the external terminals, whichis a ground terminal in many cases. In this case, the support substratecan be connected through the island to the ground.

In the SOI semiconductor device, a mounting method or an assemblingmethod such as a chip-on-board method using a flip chip (hereinafter,referred to as COB method) or a tape carrier package (hereinafter,referred to as TCP) method is employed for a higher density mountingmethod. In this case, as shown in FIGS. 1A and 1B the externalconnection electrode (not shown) provided on the single crystalsemiconductor layer 302 of the chip 110 and a conductive wiring 71 of awiring substrate 70 to be mounted or an inner lead 80 of TCP areconnected to each other through a bump 201. Therefore, there is aproblem that it is difficult to apply a potential to the supportsubstrate 301.

If the support substrate is in a floating potential, a potentialvariation in the support substrate has an adverse influence on anoperation of an element, in particular, a threshold potential. As aresult, an operation margin of the element is reduced. Also, asdisclosed in Japanese Patent No. 2654268, Japanese Laid Open PatentApplication (JP-A-Heisei 8-153781) or Japanese Laid Open PatentApplication (JP-A-Heisei 8-236754), the breakdown voltage of the elementchanges depending on the potential of the support substrate. Therefore,if the potential of the support substrate is varied during the operationof the semiconductor element, the breakdown voltage of the elementdecreases so that there is a possibility of the occurrence of anerroneous operation.

As a method of avoiding the support substrate from being in the floatingstate, for example, Japanese Laid Open Patent Application (JP-A-Heisei6-244239) (hereinafter, referred to as a conventional example 1)discloses an example of an SOI semiconductor device in which a potentialcan be applied from a surface of an element side to the supportsubstrate. FIG. 2 is a sectional view showing the semiconductor devicedisclosed in the conventional example 1. With reference to FIG. 2, asemiconductor layer 703 of the semiconductor device disclosed in theconventional example 1 is insulated from a semiconductor substrate 701by an intervening layer insulating film 702. However, conductors 710 areprovided on side walls of a concave portion 709 to extend to thesemiconductor substrate 701 so that a short-circuit is formed betweenthe semiconductor substrate 701 and a peripheral region 703 b. Thus, thesame potential as that of the peripheral region 703 b is applied to thesemiconductor substrate 701. The potential is applied to the peripheralregion 703 b through a bump 707 from a wiring substrate (not shown),similarly to an element formation region. That is, the potential isapplied to the semiconductor substrate 701 from the surface side of thesemiconductor layer 703 on which the element is formed.

Also, Japanese Laid Open Patent Application (JP-A-Heisei 2-54554)(hereinafter, referred to as a conventional example 2) discloses astructure in which a semiconductor device is manufactured by use of anSOI substrate and separated into elements by an embedded insulatingfilm. In the conventional example 2, a conductive substrate is used as alower layer of an insulating film constituting the SOI structure. FIG. 3is a sectional view showing a main portion of the semiconductor deviceshown in the conventional example 2. With reference to FIG. 3, thesemiconductor device disclosed in the conventional example 2 has astructure in which an insulating film 802 and a conductive semiconductorlayer 803 are bonded in this order on a conductive substrate 801. Anelement body 804 is formed in the semiconductor layer 803. An elementseparation trench 805 is provided to contact the insulating film 802 atits bottom and to surround the element body 804. The element separationtrench 805 is filled with a fill material 814 made of an insulator orpolysilicon. The fill material 814 contains therein a conductive fillmaterial 851 made of a p-type polysilicon layer reaching the insulatingfilm 802 from the surface of the element separation trench 805. Anopening 821 is formed in the insulating film 802 to connect theconductive fill material 851 and the conductive substrate 801. In thesemiconductor device in the conventional example 2, the conductivesubstrate 801 and an electrode 807 provided on the surface of the fillmaterial 814 are connected by the conductive fill material 851. Thus,the conductive substrate 801 can be used as the conductive material.Therefore, it is possible to reduce the crowded condition of surfacewiring lines.

In the semiconductor device of the conventional example 1, the formationof a trench for the element separation region and the formation of aconcave trench for a substrate contact are independently carried out asthe different processes. Therefore, it is necessary to etch and removethe semiconductor layers 703 at the different positions of the SOIsubstrate two times. As a result, there is a problem that themanufacturing process becomes long. Also, the structure is designed insuch a manner that the route connecting a bump electrode 707 forapplying the potential to the support substrate and the supportsubstrate 701 must pass through a peripheral region 703 b of thesemiconductor layer. Thus, there is another problem that the drop of theresistance in the route is limited.

Also, in the method of manufacturing the semiconductor device in theconventional example 2, a first trench as the trench for the elementseparation and a second trench having the width wider than that of thefirst trench are formed at the same time. Also, the insulating film 802in the bottom of the second trench is etched so that the opening 821 isformed to reach the conductive substrate corresponding to the supportsubstrate 801. In this case, a multi-layer film in which a polysiliconfilm, a nitride film and an oxide film are laminated is required so asnot to etch the other regions. Also, the conductive fill material 851 isformed to connect the electrode 807 and the conductive substrate 801 byimplanting impurities such as boron into an insulating polysiliconlayer. Thus, there is a limit on the drop in the resistance.

It should be noted that Japanese Laid Open Patent Application(JP-A-Heisei 11-135794) discloses the following semiconductor device. Inthis reference, the semiconductor device has the CMOS structure in whicha pair of offset type MOS transistors of a first conductive type and asecond conductive type are provided. The transistors are insulated andseparated from each other and are formed on an SOI substrate. In the SOIsubstrate, first and second substrates of the first conductive type areintegrally joined to each other through an embedded oxide film. Thetransistor of the second conductive type is formed to have an LMOS(Lateral MOS) structure, and the transistor of the first conductive typeis formed to have an LDMOS (Lateral Double—diffused MOS) structure.

Also, Japanese Laid Open Patent Application 2000-31266 (P2000-31266A)discloses the following semiconductor device. In this reference, thesemiconductor device has an opening tapered and wider in width than abottom on a semiconductor substrate. Insulating material is embeddedwithin the opening, and a trench separation film is provided forinsulating and separating between elements. The tapered angle betweenthe inner side of the opening and the surface of the semiconductorsubstrate is equal to or less than 88 degrees. The insulating materialis NSG grown by use of a low pressure CVD method.

SUMMARY OF THE INVENTION

Therefore, an object of the present invention is to provide asemiconductor device with an SOI structure such as an SOI structure, inwhich a support substrate and an external connection electrode formed onthe surface of a chip are connected to each other through a route of asmall resistance, and a method of manufacturing the same.

In an aspect of the present invention, a semiconductor device includes aconductive semiconductor substrate laminated on or bonded to aconductive support substrate through a first insulating film, aseparation trench which separates a device formation region where atleast a desired element is formed, from a region of the semiconductorsubstrate, a separation trench, and a substrate contact region where thesemiconductor substrate is not present. The semiconductor device furtherincludes a second insulating film which fills the separation trench andcovers a surface of the substrate contact region, an external connectionelectrode formed above the semiconductor substrate, and a supportsubstrate connecting section which passes through the first insulatingfilm and the second insulating film in the substrate contact region toconnect the external connection electrode and the support substrate.

Here, the external connection electrode may be formed through a thirdinsulating film on the semiconductor substrate. In this case, the thirdinsulating film may be identical to the second insulating film.

Also, the support substrate connecting section may include a conductivefilm which is connected with the external connection electrode andcovers the second insulating film, and a contact section which passesthrough the first insulating film and the second insulating film to thesupport substrate in the substrate contact region. In this case, theconductive film desirably contains a metal film having aluminum as mainmaterial.

Also, the contact section may be formed of a single contact. In thiscase, the single contact may include a refractory metal film formed onside wall of a contact hole for the contact, and the conductive filmfilling the contact hole in which the refractory metal film is formed.

Also, the single contact may include an additional conductive film whichcovers side wall of a contact hole for the contact, a refractory metalfilm formed on the additional conductive film on the side wall of thecontact hole, and the conductive film filling the contact hole in whichthe refractory metal film is formed.

Also, the contact section may include a plurality of contact plugsarranged in an array. In this case, the plurality of contact plugs maybe formed of tungsten.

In another aspect of the present invention, a method of manufacturing asemiconductor device is attained by (a) forming at least a desiredelement in a device forming region of a conductive semiconductorsubstrate on a chip in which the semiconductor substrate is formed on aconductive support substrate through a first insulating film; by (b)forming trenches which pass through the semiconductor substrate to thefirst insulating film; by (c) forming a second insulating film on thesemiconductor substrate to fill the trenches and to cover a side wall ofa substrate contact region; by (d) forming element contact holes for theelement to pass through said second insulating film; by (e) forming acontact hole section in the substrate hole region to pass through thefirst and second insulting films to the support substrate; by (f)filling the element contact hole with first conductive material; by (g)filling the contact hole section with second conductive material; by (h)forming a conductive film connected to the contact hole section; and by(i) forming an external connection electrode connected to the conductivefilm.

Here, the (d) forming step and the (e) forming step may be carried outat a same time.

Also, when the (d) forming step includes a first exposure step and the(e) forming step includes a second exposure step, the first exposurestep and the second exposure step may be individually carried out. Inthis case, the (d) forming step and the (e) forming step may be carriedout at a time, except for the first exposure step and the secondexposure step.

Also, the (f) filling step and the (g) filling step may be carried outat a time.

Also, the (e) forming step may include the step of forming a singlecontact hole in the substrate hole region. In this case, the (g) fillingstep and the (h) forming step may be carried out at a same time.

Also, the (e) forming step may include the step of forming a pluralityof contact holes arranged in an array in the substrate hole region.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a view schematically showing a COB mounting state of aconventional SOI semiconductor device;

FIG. 1B is a view schematically showing a TCP assembling condition of aconventional SOI semiconductor device;

FIG. 2 is a sectional view showing a conventional example of an SOIsemiconductor device in which a potential can be applied from a surfaceof an element to a support substrate;

FIG. 3 is a sectional view showing a main portion of a conventionalexample 2 of a semiconductor device;

FIG. 4 is a sectional view explaining a structural example of a chip ofa semiconductor device according to a first embodiment of the presentinvention;

FIG. 5 is a plan view schematically showing the chip of thesemiconductor device of the present invention;

FIG. 6 is a sectional view schematically showing another structuralexample of the chip of the semiconductor device in the first embodimentalong the A-A′ line of FIG. 5;

FIGS. 7A and 7B are sectional views schematically showing modificationsof the chip of the semiconductor device in the first embodiment alongthe A-A′ section of FIG. 5;

FIG. 8 is a schematic flowchart showing a manufacturing method of asemiconductor device according to the first embodiment of the presentinvention;

FIG. 9 is a detailed flowchart of a contact step of FIG. 8;

FIGS. 10A to 10E, FIGS. 11A to 11E and FIGS. 12A to 12D are sectionalviews schematically showing the semiconductor device in themanufacturing method according to the first embodiment of the presentinvention, in a main portion along the A-B line of FIG. 5;

FIG. 13 is a plan view schematically showing a wafer;

FIG. 14 is a schematic flowchart showing a modification of the method ofmanufacturing a semiconductor device in the first embodiment for amultiple-layer wiring structure;

FIG. 15 is a detailed flowchart of a multiple-wiring structure formingstep in FIG. 14;

FIGS. 16A to 16D are sectional views showing the method of manufacturinga semiconductor device according to a second embodiment of the presentinvention along the A-B portion of FIG. 5;

FIG. 17 is a schematic flowchart showing a manufacturing process of asingle-layer wiring structure in the method of manufacturing asemiconductor device according to a second embodiment of the presentinvention;

FIGS. 18A and 18B are sectional views schematically showing a mainportion of the semiconductor device according to the second embodimentof the present invention along the A-B line of FIG. 5 in the contactstep;

FIG. 19 is a detailed flowchart of the contact step in the method ofmanufacturing a semiconductor device according to a third embodiment ofthe present invention;

FIG. 20 is a sectional view schematically showing a main portion of thesemiconductor device in the third embodiment along the A-B portion ofFIG. 5

FIG. 21 is a flowchart showing a method of manufacturing a semiconductordevice according to a fourth embodiment of the present invention; and

FIGS. 22A to 22D, FIGS. 23A to 23C, and FIGS. 24A to 24D are sectionalviews showing the semiconductor device in the manufacturing methodaccording to the fourth embodiment of the present invention.

DESCRIPTION 0F THE PREFERRED EMBODIMENTS

Hereinafter, a semiconductor device of the present invention will bedescribed below in detail with reference to the attached drawings.

FIG. 4 is a cross sectional view showing a chip 110 of a semiconductordevice according to the first embodiment of the present invention. FIG.5 is a plan view schematically showing a chip 110, and FIG. 4 shows across section along the A-A′ line in FIG. 5. With reference to FIG. 4,in the chip 110 in the first embodiment, a silicon oxide (SiO₂) film 3and a P-type silicon (Si) substrate 2 are laminated or bonded in thisorder on one main surface of a P-type silicon (Si) substrate 1. Thesilicon oxide film 3 has the film thickness of about 1 μm as a firstinsulating film. The silicon substrate has the resistivity of 10 Ωcm andthe thickness of 5 μm as a support substrate. The silicon substrate 1has the resistivity of 10 Ωcm and the thickness of 650 μm.

The chip 110 is composed of a plurality of element formation regions 50which are insulated and separated by separation trenches or grooves 9 inthe silicon substrate 2, and substrate contact regions 10. Each of thesubstrate contact regions 10 has the shape of 10×10 μm and is formed ina proper empty region on the chip 110 by removing the second siliconsubstrate 2. The chip 110 is further composed of a plurality of externalconnection electrodes 200 and 200G.

A substrate contact hole 13 as a first contact hole is provided for thesubstrate contact region 10 to pass through an insulating film 11 formedby use of TEOS (tetra-ethoxy-silane (Si(OC₂H₅)₄) gas and the siliconoxide film 3 to the silicon substrate 1. The substrate contact hole 13is filled with metal, such as tungsten (W) 15 c as a refractory metal,and is connected through a metal film wiring as a support substrateconnecting wiring formed of aluminum (Al) wiring 16G to a predeterminedexternal connection electrode 200G. The refractory metal functions abarrier metal.

In this embodiment, the substrate contact hole 13 has a multi-contactstructure in which a plurality of minimum dimensional contact holes usedin the chip 110 are arrayed. Usually, a minimum dimensional contact holeis used in the element formation region 50. In the external connectionelectrodes 200 and 200G, a protective oxide film 17 and a protectivenitride film 19 for covering the Al wirings 16 and 16G are removed andopened so that the Al is exposed. Then, for example, a gold (Au) bump201 is formed thereon through an adhesive metal film 203 such astitanium (Ti) film.

Also, desirable elements to attain the function of the semiconductordevice are formed on the surface side of each element formation regions50, i.e., on the side opposite to the junction with the silicon oxidefilm 3. As an example, FIG. 4 shows a source diffusion layer 43, a draindiffusion layer 44, a gate electrode 41, a gate oxide film 41 a and aside wall oxide film 42 in an electric field transistor (MOSFET). Itshould be noted that the element formed in the element formation region50 is not any essential element in the present invention, and it is notlimited. Therefore, in the following drawings, the reference symbols ofthe elements are suitably omitted in order to avoid the complexexplanation and easily describe it.

In the semiconductor device in the first embodiment, the chip 110 hasthe above-mentioned structure. As shown in FIGS. 1A and 1B), a bump 201is directly connected onto a wiring 71 formed on a mount wiringsubstrate 70 in case of the COB mounting method, and a bump 201 isdirectly connected to an inner lead 80 in case of the TCP assembly.However, even if the silicon substrate 1 serving as a support substrate301 is not connected directly to a potential supply conductor such as anisland, a predetermined potential can be applied from an externalportion through the external connection electrode 200G and the bump 201provided on the surface of the silicon substrate 2 as a single crystalsemiconductor layer.

Moreover, the route from the bump 201 on the surface of the chip 110 tothe silicon substrate 1 is perfectly made of metal film, including thefill material of the contact hole 13. Also, predetermined impurity of ahigh density is implanted into a contact portion 14 of the siliconsubstrate 1 to reduce a contact resistance. At this time, for example,the density of boron (B) is about 10¹⁴ to 10¹⁵ atms cm⁻² in the case ofthe P-type substrate. Thus, the entire resistance of the route to applythe potential to the silicon substrate 1 as the support substrate can besufficiently small to thereby stabilize the potential of the supportsubstrate.

It should be noted that the first embodiment is described using theexample in which the contact hole 13 connected to the silicon substrate1 has the multi-contact structure. However, as shown in FIG. 6, thecontact hole 13 may be formed as a single contact hole 131 having asufficient dimension. In this case, tungsten (W) 15 fills the minutecontact hole and only a tungsten film 15 k remains on the side wall ofthe contact hole 131. However, an Al film as the wiring metal film issufficiently deposited within the contact hole 131. Since the tungstenfilm 15 k remains, the connection can be established without any problemof the disconnection in the step portion of the contact hole 131.

As shown in FIGS. 7A and 7B, a barrier metal film 56 of titanium nitride(TiN) may be laid as a lower layer of the Al wiring 16 to have apredetermined thickness. Moreover, a protective film 66 of TiN,polysilicon and the like may be further formed as an upper layer.

The method of manufacturing the semiconductor device according to thepresent invention will be described below, especially with theabove-mentioned chip manufacturing method as a target.

FIG. 8 is a flow chart showing the chip manufacturing method in thefirst embodiment in case of a one-layer wiring structure. FIG. 9 is adetailed flowchart of a contact step of FIG. 8. And, FIGS. 10A to 10E,FIGS. 11A to 11E and FIGS. 12A to 12D are sectional views schematicallyshowing the main portion of the semiconductor device along the A-B lineof FIG. 2. It should be noted that when the chips 110 is manufactured,the technique is well known in which the chips are formed in a form ofmatrix on a wafer 100, as schematically shown in FIG. 13. Therefore, thesectional view for each step will be described with reference to FIGS. 4to 9 and 13, as necessary.

With reference to FIGS. 8 and 9, the manufacturing method in the firstembodiment at least includes an element forming step S1, a mask layerforming step S2, a trench region opening step S3, a trench forming stepS4, a trench filling step S5, a flattening step S6, a contact step S7, aplug forming step S8, a wiring film depositing step S9, a wiring formingstep S10, a protective film forming step S11 and an external connectionelectrode opening step S12. Also, the contact step S7 is composed of afirst opening step S40 and a second opening step S50. The first openingstep S40 is composed of a photo resist coating step (hereinafter,referred to as PR step) S21, a first exposing step S22, a firstdeveloping step S23, a first contact hole opening step S24 and a PRremoving step S25. The second opening step S50 is composed of a PRcoating step S26, a second exposing step S27, a second developing stepS28, a second contact hole opening step S29 and a PR removing step S30.The respective steps will be described below in detail.

At first, as shown in FIG. 10A, at the element forming step S1, asilicon oxide film 3 and the P-type silicon substrate 2 are laminated orbonded in this order on one main surface of a P-type silicon substrate1. The silicon oxide film 3 has the film thickness of about 1 μm as thefirst insulating film and the P-type silicon substrate 2 has theresistivity of 10 Ωcm and the thickness of 5 μm. The P-type siliconsubstrate 1 has the resistivity of 10 Ωcm and the thickness of 650 μm. Afield insulating film 4 and desirable elements are formed on the surfaceof the wafer 100 having a diameter of 6 inches on the side opposite tothe junction plane with the silicon oxide film 3 of the siliconsubstrate 2 by use of a known method. Here, only MOSFET 40 isillustrated as an example of the element.

As shown in FIG. 10B, at the mask layer forming step S2, an siliconoxide film 5 as a second insulating film is deposited to have thethickness of about 0.5 μm on the entire surface of the wafer 100 by useof a chemical vapor deposition (hereinafter, referred to as CVD) method.

Next, as shown in FIG. 10C, at the trench region opening step S3, aphoto-resist 601 is coated on the entire surface of the wafer 100. Then,exposure and development are carried out using a predetermined reticle(not shown). As a result, a pattern for a separation trench formationopening 7 is formed to have a width h (desirably, 1 μm≦h≦2 μ). Also, apattern for a substrate contact region formation opening 8 is formed.Thus, an element formation region is separated. Moreover, the siliconoxide films 5 of the openings 7 and 8 and the field oxide film 4 areremoved by use of the known etching technique. Thus, the siliconsubstrate 2 is exposed.

As shown in FIG. 10D, at the trench forming step S4 after the removal ofthe photo-resist 601, the silicon oxide film 5 is used as an etchingmask, and the exposed portion of the silicon substrate 2 is removed byan anisotropic etching technique. Accordingly, the silicon oxide film 3is exposed to thereby form the separation trench 9 and the substratecontact region 10. At this time, slight inclination is given to the sidewalls of the substrate contact region 10 and separation trench 9 so thatthe upper end of the opening on the surface side is larger in diameterthan the bottom where the silicon oxide film 3 is exposed.

Next, as shown in FIG. 10E, at the trench filling step S5, the TEOSoxide film 11 is deposited on the entire surface of the wafer 100 by alow pressure CVD (LPCVD) method using TEOS gas and is formed as theinsulating material to fill the separation trench 9.

Next, as shown in FIG. 11A, at the flattening step S6, the TEOS oxidefilm 11 is etched back to be removed from the entire surface. Thus, astep 31 appearing in the element formation region 50 is eliminated.

Next, as shown in FIG. 11B, the contact step S7 is carried out. Atfirst, at the photo-resist coating step S21 in the first opening stepS40, a photo-resist 602 is coated on the entire surface of the wafer100. At the first exposing step S22, the exposure is carried out by useof the reticle (not shown) having the pattern for the contact hole 13 asa predetermined first contact hole. At the first developing step S23,the pattern for the contact hole 13 is developed to form the pattern ofthe contact hole 13 connected to the silicon substrate 1 at apredetermined position of the substrate contact region 10. Then, at thefirst contact hole opening step S24, the TEOS oxide film 11, the siliconoxide film 5 and the silicon oxide film 3 are etched and removed to openthe contact hole 13 reaching the silicon substrate 1. After that, thephoto-resist 602 is removed.

As shown in FIG. 11C, at the photo-resist coating step S26 in the secondopening step S50, a photo-resist 603 is coated on the entire surface ofthe wafer 100. At the second exposing step S27, exposure is carried outby use of the reticle (not shown) having the pattern for a contact hole12 as a predetermined second contact hole. At the second developing stepS28, the pattern for the contact hole 12 is developed to form thepattern for the contact hole 12 (12 s, 12 g, 12 d) connected to eachelement formed in the element formation region 50. Then, at the secondcontact hole opening step S29, the TEOS oxide film 11 and the siliconoxide film 5 are etched and removed to open the contact hole 12. Afterthat, the photo-resist 603 is removed.

It should be noted that the contact holes of the minimum dimension usedin the chip 110 are formed as a set of contact holes. Usually, theminimum size of hole can be filled with predetermined metal at the laterplug forming step S8. For example, in a case of tungsten (W), a size of0.5 μm×0.5 μm to 1.0 μm×1.0 μm is desirable for the contact hole. Inthis case, the contact hole 12 is formed in accordance with the elementas a single contact structure using only one contact hole or amulti-contact structure in which a plurality of contact holes arearrayed. It should be noted that any of the first opening process S40and the second opening process S50 may be firstly carried out.

Impurity of a predetermined amount is implanted into each contact region14, as necessary. For example, if boron is implanted for a P-typediffusion region, an implantation amount N is desired to be about 10¹⁴atms cm⁻²≦N≦10¹⁵ atoms cm⁻².

Next, as shown in FIG. 11D, at the plug forming step S8, a tungstenlayer is deposited on the entire surface of the wafer 100 by a CVDmethod, and the contact holes 12 and the contact holes 13 are filledwith tungsten. Then, the tungsten layer is etched back from the entiresurface to thereby remove tungsten on the TEOS oxide film 11 in theflattened portion. Thus, in the contact holes 12 and 13, a tungsten plug15 s, a tungsten plug 15 d, a tungsten plug 15 g and a tungsten plug 15c remain as the fill metal. Also, the portions of the contact holes 12and 13 are flattened. It should be noted that at the time, a tungstenfilm 15 h also remains on the side wall of the substrate contact region10.

Next, as shown in FIG. 11E, at the wiring film depositing step S9, an Allayer is deposited with a predetermined thickness on the entire surfaceof the wafer 100 as the wiring conductive material.

Next, as shown in 12A, at the wiring forming step S10, a photo-resist604 is coated on the entire surface of the wafer 100, and a reticle (notshown) having a predetermined wiring pattern is used to expose anddevelop. The Al layer in a region other than the wiring portion isremoved by use of the known dry etching technique. Thus, the Al wiring16G is formed as the support substrate connection wiring through toconnect the silicon substrate 1 and the predetermined externalconnection electrode 200G. Also, the Al wirings 16 serving as desiredinner connection wirings and the external connection electrodes 200 and200G are formed.

Next, as shown in FIG. 12B, at the protective film forming step S11, thesilicon oxide film for protecting the Al wirings 16 and 16G aredeposited with the thickness of t1 on the entire surface of the wafer100. In this case, desirably, 0.3 μm≦t1≦1 μm. Also, the protective oxidefilm 17 is formed. In succession, as shown in FIG. 12C, SOG (Spin OnGlass) 18 is coated on it. After coated SOG is heated and hardened, theSOG film 18 is etched back on the entire surface until the protectiveoxide film 17 in the flattened portion is exposed. Thus, the concave andconvex state on the surface is relaxed. Moreover, as shown in FIG. 12D,a silicon nitride film (Si₃N₄ film) is deposited with the thickness oft2. In this case, desirably, 0.1 μm≦t2≦0.5 μm. Thus, the protectivenitride film 19 is formed. It should be noted that as the protectivenitride film 19, it is possible to use a silicon oxide nitride film(SiON film). Then, the external connection electrodes 200 and 200G areopened by use of the known photo-lithography and etching techniques.Moreover, the bumps 201 are formed as necessary, and the wafer processis ended.

When the chip 110 has the multi-layer wiring structure, the process fromthe element forming step S1 to the wiring forming step S10 are identicalto those in the first embodiment, as shown in the schematic flowchart ofFIG. 14. Although not shown again, after the wiring forming step, amulti-layer wiring forming step S61 is carried out by use of the knownmethod of manufacturing the multi-layer wiring. Then, the protectivefilm forming step S11 and the external connection electrode opening stepS12 are carried out. The protective insulating film with a predeterminedthickness is formed to protect the top layer wiring similarly to thefirst embodiment. Then, the external connection electrodes 200 and 200Gare opened. Moreover, the bumps 201 are formed as necessary, and thewafer process is ended.

It should be noted that as shown in FIG. 15, the multi-layer wiringforming step S61 is carried out by repeating the steps including aninterlayer insulating film forming step S71, an interlayer via-holeforming step S72, a plug forming step S73 of filling a via-hole withmetal, an upper layer wiring film depositing step S74 and an upper layerwiring forming step S75 for the necessary number of times, e.g., (k−1)times in a case of K layers.

After the wafer process is ended irrespectively of the one-layer wiringstructure or the multi-layer wiring structure, the wafer 100 is cut outinto the chips 110. Then, the chip is assembled to a desirable packageto complete the semiconductor device.

As mentioned above, according to the method of manufacturing thesemiconductor device in the first embodiment, when the separation trench9 is formed for separating the element formation region 50, thesubstrate contact regions 10 are simultaneously formed. The substratecontact region 10 is set in the proper empty region within the chip 110.Also, when the separation trench 9 should be perfectly filled with theTEOS oxide film 11, the TEOS oxide film 11 is deposited with the samethickness in the flattened portion and the substrate contact region 10.Thus, the substrate contact region 10 has a sufficient size so that thecontact region 10 is not fully filled. Thus, only by adding the firstopening step, the contact hole 13 can be formed as the first contacthole for the connection to the silicon substrate 1 serving as thesupport substrate at the small resistance. Therefore, the semiconductordevice can be manufactured which has the chip 110 in which the potentialcan be applied to the support substrate from the surface plane of thechip 110.

It should be noted that in the above-mentioned first embodiment, thefirst contact hole is described by use of the contact hole 13 having themulti-contact structure as the example. However, it may be the singlecontact structure. It should be noted that even if the first contacthole has the single contact structure, it is sufficient that only thepattern of the reticle used in the first opening step is changed. Also,the processed contents at the respective steps are perfectly identicalto those of the manufacturing method of the first embodiment. Thus, thedetailed explanations are omitted. FIGS. 16A to 16D are the sectionalviews for the respective steps until the wiring film depositing step S9after the first opening step S40 of the contact step S7 when the firstcontact hole has the single contact structure, and correspond to FIGS.11B to 11E. In the case, a contact hole 131 made in the first openingstep S40 has a sufficiently large dimension such as about 2 μm×2 μm to 5μm×5 μm. Thus, even if the contact hole 12 is perfectly filled with thetungsten at the plug forming step S8, the contact hole 13 is not filled.The tungsten having the film thickness equal to that of the tungstendeposited on the flattened portion is only deposited on the bottom.Therefore, if the etch-back operation is performed to remove thetungsten layer in the flattened portion, the tungsten layer in thebottom of the contact hole 131 is also removed so that only the tungsten15 k remains on the side wall (FIG. 16C). However, the tungsten 15 kremaining on the side wall effectively functions to protect the stepdisconnection of the wiring 16G in the contact hole 131. Thus, theconnection is made surer.

Next, a method of manufacturing a semiconductor device according to thesecond embodiment of the present invention will be described below withthe above-mentioned chip manufacturing method as the target.

The schematic flowchart of the method of manufacturing the semiconductordevice in the second embodiment is similar to that of the firstembodiment shown in FIG. 8. However, it is different in the detailedportion of the contact step S7. FIG. 17 hows the detailed flowchart ofthe contact step S7 included in the manufacturing method of the secondembodiment. With reference to FIG. 17, the contact step S80 has aphoto-resist coating step S81, a first exposing step S82, a secondexposing step S83, a collectively developing step S84, a collectivelyopening step S85, and a photoresist removing step S86.

FIGS. 18A and 18B are diagrams describing the contact step S80 in thesecond embodiment, and are the sectional views schematically showing themain portion of the semiconductor device along the A-B line of FIG. 5.It should be noted that the other steps in the second embodiment areequal to those of the first embodiment, as mentioned above. Thus, thedescription of the steps other than the contact step S80 is omitted.

With reference to FIG. 17 and FIGS. 18A and 18B, in the contact step S7in the second embodiment, at the photo-resist coating step S81, thephoto-resist 602 is coated on the entire surface of the wafer 100 afterthe flattening step S6. At the first exposing step S82, the reticle (notshown) having the pattern of the contact hole 13 as the predeterminedfirst contact hole is used for exposure. In succession, at the secondexposing step S83, the reticle (not shown) having the pattern of thecontact hole 12 as the second contact hole is used for exposure. Then,at the collectively developing step S84, these patterns are developed tocollectively form the patterns of the contact hole 12 and the contacthole 13. At the collectively opening step S85, the TEOS oxide film 11,the silicon oxide film 5 and the silicon oxide film 3 are etched andremoved to thereby open the contact holes 12 and 13, as shown in FIG.18A. Also, in the second embodiment, as shown in FIG. 18B, similarly tothe case of the first embodiment, it is naturally allowable to use thefirst contact hole as the pattern of the contact hole 131 having thesingle contact structure. Also, any of the first exposing step S82 andthe second exposing step S83 may be firstly carried out.

According to the method of manufacturing the semiconductor device in thesecond embodiment, when the separation trench 9 is formed for separatingthe element formation region 50, the substrate contact region 10 issimultaneously formed in the proper empty region within the chip 110.Also, when the separation trench 9 is perfectly filled with the TEOSoxide film 11, the TEOS oxide film 11 has the same thickness as that ofthe TEOS oxide film 11 on the flattened portion. Thus, the substratecontact region 10 is formed to have a sufficient size so as not to befilled. Thus, the first and second exposing steps S82 and S83 are onlyadded for exposing the pattern of the contact hole 131 or the contacthole 13 as the first contact hole for the connection to the siliconsubstrate 1 as the support substrate. In this way, the semiconductordevice can be manufactured which has the chip 110 in which the potentialcan be applied to the support substrate in the small resistance from thesurface plane of the chip where the desired elements are formed.

Next, a method of manufacturing a semiconductor device according to thethird embodiment of the present invention will be also described belowwith the above-mentioned chip manufacturing method as the target.

The schematic flowchart of the method of manufacturing the semiconductordevice in the third embodiment is also similar to that of the firstembodiment shown in FIG. 8. However, it is also different in thedetailed portion of the contact step S7. FIG. 19 shows the detailedflowchart of the contact step S7 included in the manufacturing method ofthe third embodiment. With reference to FIG. 19, the contact step S7(S90) has a photo-resist coating step S91, a collectively exposing stepS92, a collectively developing step S93, a collectively opening stepS94, and a photoresist removing step S95.

FIG. 20 is a view showing the contact step S90 in the third embodiment,and is a sectional view schematically showing the main portion of thesemiconductor device along the A-B line of FIG. 2. It should be notedthat the other steps in the third embodiment are equal to those of thefirst embodiment, as mentioned above. Therefore, the description of thesteps other than the contact step S90 is omitted. With reference to FIG.19 and 20, in the contact step S90 in the third embodiment, at thephoto-resist coating step S91, the photo-resist 602 is coated on theentire surface of the wafer 100 after the flattening step S6. At thecollectively exposing step S92, the reticle (not shown) having both thepatterns for the contact hole 131 and the contact hole 12 are used toexpose. Then, at the collectively developing step S93, these patternsare developed to collectively form the patterns of the contact hole 131and the contact hole 12. At the collectively opening step S94, the TEOSoxide film 11, the silicon oxide film 5 and the silicon oxide film 3 areetched and removed to thereby open the contact holes 12 and 131. In thecase, there is the large step difference between the pattern formationsurface of the contact hole 131 as the first contact hole and thepattern formation surface of the contact hole 12 as the second contacthole. Thus, there is a problem that if a resolution of one pattern is atan optimal condition, a resolution of the other pattern is deteriorated.Therefore, at least one contact hole 131 having a size suitable for thefirst contact hole is included. FIG. 20 shows the single contactstructure of the contact hole 131 as the example. In this case, thepattern of the contact hole 131 can be sufficiently resolved, even ifthe exposure is carried out when the resolution of the pattern of thecontact hole 12 requiring the high resolution is at the optimalcondition at the time of the pattern exposure.

According to the method of manufacturing the semiconductor device in thethird embodiment, the separation trench 9 is formed for separating theelement formation region 50. At this time, the substrate contact region10 is simultaneously formed in the proper empty region within the chip110. Also, when the separation trench 9 is perfectly filled with theTEOS oxide film 11, the film thickness of the TEOS oxide film 11 in thecontact hole is same as that of the TEOS oxide film 11 on the flattenedportion. Thus, the substrate contact region 10 is formed to have asufficient size so as not to be filled. Thus, at least one contact holeis included to have a proper size (usually, 2 μm×2 μm to 5 μm×59 μm) asthe first contact hole for the connection to the silicon substrate 1 asthe support substrate. In this case, the first contact hole can beexposed, developed and opened simultaneously with the second contacthole for the connection to the element formed in the element formationregion 50. Therefore, without any additional step, the semiconductordevice can be manufactured to have the chip 110 in which the potentialcan be applied to the support substrate in the small resistance from thesurface plane of the chip where the desired elements are formed.

It should be noted that the semiconductor device in the presentinvention and the method of manufacturing the same are not limited tothe description of the above-mentioned embodiments. Therefore, thevarious modifications can be made thereto without departing from thespirit and scope of the present invention. For example, when the siliconsubstrate is used as the support substrate, its conductive type may beany of the P-type or the N-type if the resistivity is 1 to 50 Ωcm andthe thickness is 600 to 700 μm. Also, even when it is not the siliconsubstrate, the proper material can be selected and used if it iselectrically conductive and has no problem with regard to themanufacturing process. As the semiconductor substrate 2, the silicon isdesirable which contains the single crystal layer having the resistivityof 10 to 20 Ωcm and the thickness of 2 to 10 μm. However, it is notlimited thereto. As the first insulating film 3, if the siliconsubstrate is used as the support substrate, the silicon oxide film isdesired to have the thickness of 0.5 μm to 2 μm. Also, the substratecontact region 10 may be suitably determined depending on the size ofthe empty region of the chip 110, in the range between about 5 μm×5 μmand 100 μm×100 μm. Also, at the plug forming step, tungsten is describedas the example of the fill metal. However, if a high temperaturesputtering method in which a substrate temperature is set at about 500°C. is used, Al can be also used as the fill metal. Moreover, the metalfor the wiring is not limited to the above-mentioned Al. Siliconinclusion aluminum (AlSi), copper inclusion aluminum (AlCu), copper andsilicon inclusion aluminum (AlSiCu) and the like can be used.

In the above-mentioned embodiments, the example is described in whichafter the element forming step is firstly carried out to form thedesirable element, the trench region opening step and the trench formingstep are carried out to form the separation trench 9 and the substratecontact region 10. However, it is possible to form the desirable elementin the element formation region 50 after the separation trench 9 and thesubstrate contact region 10 are firstly formed to fill the separationtrench 9.

FIG. 21 is a flowchart showing an example of a procedure when theseparation trench 9 and the substrate contact region 10 are firstlyformed. FIGS. 22A to 22D, FIGS. 23A to 23C, and FIGS. 24A to 24D areviews showing a chip manufacturing method along the flowchart of FIG.21, and are the sectional views schematically showing the main portionof the semiconductor device along the A-B line of FIG. 2 at the mainsteps (however, until the plug forming step).

As shown in FIG. 22A, a silicon oxide film 3 and a P-type siliconsubstrate 2 are laminated or bonded in this order on one main surface ofThe P-type silicon substrate 1. The silicon oxide film 3 serving as afirst insulating film has the film thickness of about 1 μm, and theP-type silicon substrate 2 has the resistivity of 10 Ωcm and thethickness of 5 μm. The P-type silicon substrate 1 has the resistivity of10 Ωcm and the thickness of 650 μm. Then, the separation trench isfirstly formed. Next, at a mask layer forming step S101, an siliconoxide film 5 is deposited with the thickness of about 0.5 μm by use ofthe CVD method, on the entire surface of the wafer 100 having a diameterof 6 inches.

As shown in FIG. 22B, at a trench region opening step S102, aphoto-resist 601 is coated on the entire surface of the wafer 100. Then,predetermined reticle (not shown) is used to expose and develop, whichforms a pattern for a separation trench formation opening 7 having awidth h and a pattern for a substrate contact region formation opening8, in order to separate an element formation region. Moreover, thesilicon oxide films 5 are removed portions for the openings 7 and 8 byuse of the known etching technique. Thus, the silicon substrate 2 isexposed.

Next, as shown in FIG. 22C, the photo-resist 601 is removed. Then, at atrench forming step S103, the silicon oxide film 5 is used as theetching mask, and the portion in which the silicon substrate 2 isexposed is removed by the anisotropic etching technique. Accordingly,the silicon oxide film 3 is exposed to thereby form the separationtrench 9 and the substrate contact region 10. At this time, similarly tothe above-mentioned embodiments, the slight inclination is given to theside wall of the substrate contact region 10 and the separation trench 9so that the upper end of the opening on the surface side is larger thanthe bottom in which each silicon oxide film 3 is exposed.

Next, as shown in FIG. 22D, at a trench filling step S104, the TEOSoxide film 11 is deposited on the entire surface of the wafer 100 by theLPCVD method using the TEOS gas, and the separation trench 9 isperfectly filled.

Next, as shown in FIG. 23A, at the mask layer removing step S105, theTEOS oxide film 11 deposited on the surface of the wafer 100 and thesilicon oxide film 5 are etched back on the entire surface toaccordingly expose the silicon substrate 2 of the element formationregion 50.

Next, as shown in FIG. 23B, at an element forming step S106, a fieldinsulating film 4 and desirable elements are formed by use of a knownmethod.

Next, as shown in FIG. 23C, at a flattening step S107, an silicon oxidefilm 52 is deposited with the thickness of about 1.5 μm on the surfaceof the wafer 100 by the CVD. Then, the silicon oxide film 52 is etchedback on the entire surface to accordingly reduce a step difference 31appearing in the element formation region 50.

Next, as shown in FIG. 24A, a contact step S108 is carried out. When thefirst and second contact holes are formed, the insulating films are (theTEOS oxide film 11+the silicon oxide film 3) and (the TEOS oxide film11+the silicon oxide film 5) in case where the elements are firstlyformed, similarly to the above-mentioned embodiments. However, theinsulating films are (the silicon oxide film 52+the silicon oxide film3) and the silicon oxide film 52 in case where the separation trench isfirstly formed. The other processes are similar to those of theabove-mentioned embodiments. As a result, the detailed description isomitted. Also, the operations on and after the plug forming step S109are perfectly similar to those of the above-mentioned embodiments. Thus,the sectional views for the respective steps and the detaileddescription are omitted. By way of precaution, the sectional view afterthe plug forming step S109 is shown in FIG. 24D. This corresponds toFIG. 11E of the above-mentioned embodiments.

As mentioned above, in the semiconductor device according to the presentinvention, the route to the support substrate from the externalconnection electrode on the surface of the chip, including the fillmaterial of the contact hole, is perfectly made of the metal film. Thus,the entire resistance of the route can be sufficiently small to therebystabilize the potential of the support substrate. Moreover, in themanufacturing method, the separation trench and the substrate contactregion are formed at the same time. When the separation trench is filledwith the insulator, the substrate contact region is designed so as notto be filled. Therefore, only the opening process is merely added foropening the first contact hole connected to the support substrate. Thus,the semiconductor device can be easily manufactured without anysubstantial step addition.

What is claimed is:
 1. A semiconductor device comprising: a conductivesemiconductor substrate laminated or bonded on a conductive supportsubstrate through a first insulating film; a separation trench whichseparates a device formation region where at least a desired element isformed, from a region of said semiconductor substrate; a substratecontact region where said semiconductor substrate is not present; asecond insulating film which fills said separation trench and covers asurface of said substrate contact region; an external connectionelectrode formed above said semiconductor substrate; and a supportsubstrate connecting section which passes through said first insulatingfilm and said second insulating film in said substrate contact region toconnect said external connection electrode and said support substrate.2. The semiconductor device according to claim 1, wherein said externalconnection electrode is formed through a third insulating film on saidsemiconductor substrate.
 3. The semiconductor device according to claim2, wherein said third insulating film is identical to said secondinsulating film.
 4. The semiconductor device according to claim 1,wherein said support substrate connecting section comprises a conductivefilm which is connected with said external connection electrode andcovers said second insulating film; and a contact section which passesthrough said first insulating film and said second insulating film tosaid support substrate in said substrate contact region.
 5. Thesemiconductor device according to claim 4, wherein said conductive filmcontains a metal film having aluminum as main material.
 6. Thesemiconductor device according to claim 4, wherein said contact sectionis formed of a single contact.
 7. The semiconductor device according toclaim 6, wherein said single contact comprises: a refractory metal filmformed on side wall of a contact hole for said contact; and saidconductive film filling said contact hole in which said refractory metalfilm is formed.
 8. The semiconductor device according to claim 6,wherein said single contact comprises: an additional conductive filmwhich covers side wall of a contact hole for said contact; a refractorymetal film formed on said additional conductive film on said side wallof said contact hole; and said conductive film filling said contact holein which said refractory metal film is formed.
 9. The semiconductordevice according to claim 4, wherein said contact section comprises: aplurality of contact plugs arranged in an array.
 10. The semiconductordevice according to claim 9, wherein said plurality of contact plugs areformed of tungsten.